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Conductivity Modulation of a Slit Channel in a Monolayer MoS 2 Homostructure
Author(s) -
Kong Xiangcong,
Li Tao,
Xu Yeming,
Cao Lin,
Lu Minghui,
Wu Di,
Min Tai
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202070030
Subject(s) - slit , conductivity , monolayer , materials science , transistor , field effect transistor , microwave , modulation (music) , optoelectronics , electrical impedance , voltage , electrical engineering , optics , nanotechnology , chemistry , physics , engineering , telecommunications , acoustics
In 2D materials, when two 1D edges lie close to each other, they form a slit, which demonstrates distinctive electronic features. The conductivity variation over a slit‐based MoS 2 homostructure was demonstrated by Tao Li, Di Wu and co‐workers (article number 2000082 ) using Scanning Microwave Impedance Microscopy. The potential difference between the two separated flakes can effectively modulate the conductivity along the edges of the slit, which can be controlled independently by the back‐gate voltage and scanning conditions. A novel dual‐gate field‐effect transistor is thus proposed with potentially improved performance.