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Evidence of O‐Polar (000 1 ¯ ) ZnO Surfaces Induced by In Situ Ga Doping
Author(s) -
Sallet Vincent,
Sartel Corinne,
Arnold Christophe,
Hassani Said,
Vilar Christèle,
Amiri Gaelle,
Lusson Alain,
Galtier Pierre,
Barjon Julien,
Masenelli-Varlot Karine,
Masenelli Bruno
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202070029
Subject(s) - metalorganic vapour phase epitaxy , in situ , chemical vapor deposition , nanowire , doping , materials science , facet (psychology) , polar , nanostructure , nanotechnology , metal , crystal (programming language) , optoelectronics , chemistry , epitaxy , metallurgy , layer (electronics) , physics , organic chemistry , psychology , social psychology , personality , astronomy , computer science , big five personality traits , programming language
In situ Ga doping during the metal‐organic chemical vapor deposition (MOCVD) growth of Aucatalyzed ZnO nanowires induces the formation of new O‐polar surfaces, demonstrating that crystal facet engineering can be achieved through a modification of surface energies. Nanostructures having opposite polarities are generated: Christmas trees grown along + C (0001) axis exhibit overhangs, while Taipei towers grown along − C (000‐1) axis show terraces. For further details see article number 2000037 by Vincent Sallet et al.