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Fully Integrated Organic Field‐Effect Transistor Platform to Detect and to Quantify NO 2 Gas
Author(s) -
Yuvaraja Saravanan,
Surya Sandeep G.,
Vijjapu Mani Teja,
Chernikova Valeriya,
Shekhah Osama,
Eddaoudi Mohamed,
Salama Khaled Nabil
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202070027
Subject(s) - organic field effect transistor , transistor , materials science , optoelectronics , sensitivity (control systems) , thermometer , field effect transistor , organic semiconductor , computer science , electrical engineering , electronic engineering , physics , engineering , quantum mechanics , voltage
To date, organic semiconductor (OSC) materials have been used in transistor devices for several sensor applications. Saravanan Yuvaraja et al. (article number 2000086 ) explored the use of Diketopyrrolopyrrole (DPP) based OSCs and metal‐organic frameworks (MOFs) in heterostructure configuration to realize an organic field‐effect transistor (OFET) that can sense NO 2 gas. Not only did they achieve high selectivity and ultra‐sensitivity but also a super stable device performance. Furthermore, they built a complete analog‐to‐digital converter (ADC) that facilitates the conversion of NO 2 concentration to digital thermometer code with just two OFETs. The results provide a direction to optimize the sensor node circuitry and contributes to ubiquitous deployment.