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CsPbBr 3 Perovskite Quantum Dot Light‐Emitting Diodes Using Atomic Layer Deposited Al 2 O 3 and ZnO Interlayers
Author(s) -
Yun Hwang-Sik,
Noh Kyeongchan,
Kim Jigeon,
Noh Sung Hoon,
Kim Gi-Hwan,
Lee Woongkyu,
Na Hyon Bin,
Yoon Tae-Sik,
Jang Jaeyoung,
Kim Younghoon,
Cho Seong-Yong
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202070012
Subject(s) - atomic layer deposition , materials science , perovskite (structure) , light emitting diode , layer (electronics) , photoluminescence , optoelectronics , quantum dot , diode , passivation , quenching (fluorescence) , nanotechnology , chemical engineering , fluorescence , optics , physics , engineering
Most perovskite quantum dot light‐emitting diodes (PQD‐LEDs) are fabricated by vacuum processes, because PQDs are generally damaged by polar solvents which are typically used as the solvent for charge transport layer. To prevent photoluminescence quenching by polar solvent, Younghoon Kim, Seong‐Yong Cho, and co‐workers (article number 1900573 ) introduce atomic layer deposition (ALD)‐processed passivating layers between PQD layer and electron transport layer. The ALD‐Al 2 O 3 layers show excellent passivating effect from polar solvent and diethyl zinc. Furthermore, the bi‐layer architecture, ALD‐ZnO layer on ALD‐Al 2 O 3 , is introduced – to not only overcome the insulating properties of Al 2 O 3 , but also provide better contact resistance with spin‐coated ZnO nanoparticles. Bi‐layer PQD‐LEDs show significantly enhanced performance because of better electron transporting ability and higher power efficiency compared to the case when ALD‐Al 2 O 3 or ALD‐ZnO interlayer is used solely.