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Memristors based on TiO x /HfO x or AlO x /HfO x Multilayers with Gradually Varied Thickness
Author(s) -
Yin Binfeng,
Wang Yongzhi,
Xie Guancai,
Guo Beidou,
Gong Jian Ru
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000607
Subject(s) - resistive random access memory , memristor , materials science , optoelectronics , random access memory , resistive touchscreen , nanotechnology , electronic engineering , voltage , electrical engineering , computer science , engineering , computer hardware
As a fourth fundamental two‐terminal circuit element, memristors have received great research interest as resistive random access memory (RRAM). Herein, a new memristor structure based on TiO x /HfO x or AlO x /HfO x multilayers with gradually varied thickness as the switching material is fabricated. The devices show forming‐free, self‐compliance, reliable multilevel resistive switching, and low switching voltage properties, and are promising for applications in future advanced integrated circuits.