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Single GaN Nanowires for Extremely High Current Commutation
Author(s) -
Shugurov Konstantin,
Mozharov Alexey,
Sapunov Georgiy,
Fedorov Vladimir,
Tchernycheva Maria,
Mukhin Ivan
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000590
Subject(s) - nanowire , molecular beam epitaxy , materials science , substrate (aquarium) , optoelectronics , commutation , current (fluid) , electron beam induced current , current density , thermal conduction , conductivity , epitaxy , nanotechnology , silicon , voltage , layer (electronics) , chemistry , composite material , electrical engineering , physics , oceanography , engineering , quantum mechanics , geology
An array of GaN nanowires (NWs) on Si substrate is synthesized by molecular beam epitaxy. Measurements of electrical properties at room temperature of single NWs transferred to an auxiliary substrate demonstrate that the current density reaches an extremely high level of 2 MA cm −2 without NW damage. Taking into account the limited conductivity of the NW periphery due to electron surface states, that is, the conduction channel narrowing, the effective current density can reach 3 MA cm −2 .