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High‐Current‐Density Enhancement‐Mode Ultrawide‐Bandgap AlGaN Channel Metal–Insulator–Semiconductor Heterojunction Field‐Effect Transistors with a Threshold Voltage of 5 V
Author(s) -
Xue Hao,
Hussain Kamal,
Talesara Vishank,
Razzak Towhidur,
Gaevski Mikhail,
Mollah Shahab,
Rajan Siddharth,
Khan Asif,
Lu Wu
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000576
Subject(s) - transconductance , materials science , cutoff frequency , optoelectronics , heterojunction , threshold voltage , field effect transistor , current density , transistor , band gap , semiconductor , voltage , electrical engineering , physics , quantum mechanics , engineering
Enhancement‐mode ultrawide‐bandgap Al 0.65 Ga 0.35 N/Al 0.4 Ga 0.6 N metal–insulator–semiconductor heterojunction field‐effect transistors are demonstrated using fluorine‐plasma treatment for threshold voltage control and Al 2 O 3 as gate dielectric. The device exhibits a threshold voltage of 5 V, a maximum drain current density of 105 mA mm −1 , and a transconductance of 19 mS mm −1 . In addition, the capability to achieve low off‐state current density at 3–4 × 10 −9 mA mm −1 , an exceptionally low gate leakage current density of 1.4 × 10 −8 mA mm −1 even at a high forward gate bias of V GS = 12 V, and a current on/off ratio >10 10 is shown. Small signal measurement shows that the device has a unity current gain cutoff frequency f T of 3.8 GHz and power gain cutoff frequency f max of 4.5 GHz.