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Metal–Insulator Transitions in Stable V 2 O 3 Thin Films: Atomic Layer Deposition and Postdeposition Annealing Studies
Author(s) -
Manjunath Krishnappa,
Singh Reetendra,
Panda Debendra Prasad,
Rao Chintamani Nagesa Ramachandra
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000565
Subject(s) - atomic layer deposition , thin film , annealing (glass) , materials science , sapphire , electrical resistivity and conductivity , analytical chemistry (journal) , metal , insulator (electricity) , nanotechnology , optoelectronics , composite material , chemistry , metallurgy , optics , electrical engineering , laser , physics , engineering , chromatography
New, stable V 2 O 3 thin films are prepared using VO(acac) 2 and ozone (O 3 ) by atomic layer deposition (ALD) and a post‐treatment process on a c ‐Al 2 O 3 substrate. The obtained V 2 O 3 thin films are crystalline, and have single‐phase and rhombohedral structure. The present ALD process yields a thickness of 48 nm by 1000 ALD cycles at a temperature of 200 °C; it portrays uniformity on planar sapphire substrates. The V 2 O 3 films (48 nm) exhibit a sharp metal–insulator transition (MIT) at a temperature of ≈165 K with five orders of magnitude change in electrical resistivity.