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Area‐Selective Atomic Layer Deposition of MoS 2 using Simultaneous Deposition and Etching Characteristics of MoCl 5
Author(s) -
Ahn Wonsik,
Lee Hyangsook,
Kim Hoijoon,
Leem Mirine,
Lee Heesoo,
Park Taejin,
Lee Eunha,
Kim Hyoungsub
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000533
Subject(s) - atomic layer deposition , etching (microfabrication) , deposition (geology) , layer (electronics) , adsorption , substrate (aquarium) , chemical vapor deposition , materials science , selectivity , chemical engineering , analytical chemistry (journal) , chemistry , inorganic chemistry , optoelectronics , nanotechnology , catalysis , organic chemistry , paleontology , oceanography , sediment , geology , engineering , biology
A novel selective atomic layer deposition (ALD) process for depositing MoS 2 using MoCl 5 and H 2 S precursors is proposed. On the surface of SiO 2 , the prolonged introduction of MoCl 5 vapor by increasing the MoCl 5 pulsing time rapidly suppresses the subsequent MoS 2 growth due to the intense self‐etching effect of MoCl 5 , that is, the detachment of weakly bonded surface adsorbates (MoCl x *). In contrast, the surface of Al allows more facile adsorption of MoCl 5 than in the case of the SiO 2 surface, and thus effectively compensates for the reduced deposition rate. By optimizing the MoCl 5 pulsing time, the self‐aligned growth of MoS 2 on predefined Al (5 nm) patterns (circular and letter patterns) on a SiO 2 substrate with a negligible selectivity loss is demonstrated.