Area‐Selective Atomic Layer Deposition of MoS 2 using Simultaneous Deposition and Etching Characteristics of MoCl 5

A novel selective atomic layer deposition (ALD) process for depositing MoS 2 using MoCl 5 and H 2 S precursors is proposed. On the surface of SiO 2 , the prolonged introduction of MoCl 5 vapor by increasing the MoCl 5 pulsing time rapidly suppresses the subsequent MoS 2 growth due to the intense self‐etching effect of MoCl 5 , that is, the detachment of weakly bonded surface adsorbates (MoCl x *). In contrast, the surface of Al allows more facile adsorption of MoCl 5 than in the case of the SiO 2 surface, and thus effectively compensates for the reduced deposition rate. By optimizing the MoCl 5 pulsing time, the self‐aligned growth of MoS 2 on predefined Al (5 nm) patterns (circular and letter patterns) on a SiO 2 substrate with a negligible selectivity loss is demonstrated.