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HfO 2 ‐Based Ferroelectrics Applications in Nanoelectronics
Author(s) -
Dragoman Mircea,
Aldrigo Martino,
Dragoman Daniela,
Iordanescu Sergiu,
Dinescu Adrian,
Modreanu Mircea
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000521
Subject(s) - nanoelectronics , materials science , neuromorphic engineering , optoelectronics , transistor , graphene , cmos , miniaturization , field effect transistor , capacitance , ferroelectricity , nanotechnology , engineering physics , electronic engineering , electrical engineering , dielectric , voltage , computer science , engineering , physics , electrode , quantum mechanics , machine learning , artificial neural network
This article is dedicated to HfO 2 ‐based ferroelectrics applications in nanoelectronics, especially to topics not well developed up to now, such as microwaves, energy harvesting, and neuromorphic devices working as artificial neurons and synapses. Other well‐covered topics in the literature, such as memories or negative‐capacitance ferroelectric field‐effect transistors, will be only briefly mentioned. The main impact of HfO 2 ‐based ferroelectrics is the possibility of using them for fabricating at the wafer‐level complementary metal oxide semiconductor (CMOS) compatible high‐frequency devices, such as phase‐shifters, antenna arrays, or filters with a high degree of tunability and miniaturization, as well as energy harvesting devices and neuromorphic key components. In addition, the recent transfer of 2D materials on HfO 2 ferroelectrics has demonstrated new physical effects, such as opening a 0.2 eV bandgap in graphene monolayers, and allows the manufacture of very high‐mobility field‐effect transistors (FETs) based on graphene/HfZrO.