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On Some Unique Specificities of Ge‐Rich GeSbTe Phase‐Change Material Alloys for Nonvolatile Embedded‐Memory Applications
Author(s) -
Luong Minh Anh,
Agati Marta,
Ratel Ramond Nicolas,
Grisolia Jérémie,
Le Friec Yannick,
Benoit Daniel,
Claverie Alain
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000471
Subject(s) - crystallization , materials science , phase change memory , amorphous solid , homogeneous , thermal stability , phase change , phase (matter) , doping , amorphous semiconductors , chemical engineering , crystallography , nanotechnology , thermodynamics , thin film , optoelectronics , chemistry , physics , layer (electronics) , organic chemistry , engineering
Among the many possible phase‐change materials that can be used in digital memories, Ge‐rich GeSbTe (GGST) alloys are of special interest due to their much higher thermal stability, i.e., the higher crystallization temperature, they offer. However, in contrast to congruent materials which may transit from the amorphous to the crystalline state while keeping the same homogeneous chemical composition, GGST crystallization is obtained through the successive formation of the Ge and GST‐225 phases. For this reason, they show distinct properties and characteristics from those found in the canonical GST‐225 and GeTe alloys. Herein, some of these characteristics, their crystallization kinetics, the effect of N doping and oxidation, and their electrical properties are reviewed and highlighted.