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Laser‐ and Ion‐Induced Defect Engineering in WS 2 Monolayers
Author(s) -
Asaithambi Aswin,
Kozubek Roland,
Prinz Günther M.,
Reale Francesco,
Pollmann Erik,
Ney Marcel,
Mattevi Cecilia,
Schleberger Marika,
Lorke Axel
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000466
Subject(s) - monolayer , luminescence , materials science , vacancy defect , ion , laser , tungsten disulfide , irradiation , tungsten , excitation , tungsten diselenide , transition metal , band gap , optoelectronics , photoluminescence , nanotechnology , chemistry , optics , crystallography , biochemistry , physics , electrical engineering , organic chemistry , engineering , nuclear physics , metallurgy , catalysis
Tungsten disulfide is one of the prominent transition metal dichalcogenide materials, which shows a transition from an indirect to a direct bandgap as the layer thickness is reduced down to a monolayer. To useWS 2monolayers in devices, detailed knowledge about the luminescence properties regarding not only the excitonic but also the defect‐induced contributions is needed. Herein,WS 2monolayers are irradiated withXe 30 +ions with different fluences to create different defect densities. Apart from the excitonic contributions, two additional emission bands are observed at low temperatures. These bands can be reduced or even suppressed, if the flakes are exposed to laser light with powers up to 1.5 mW. Increasing the temperature up to room temperature leads to recovery of this emission, so that the luminescence properties can be modified using laser excitation and temperature. The defect bands emerging after ion irradiation are attributed to vacancy defects together with physisorbed adsorbates at different defect sites.