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Transient Polarization Reversal using an Intense THz Pulse in Silicon‐Doped Lead Germanate
Author(s) -
Bilyk Vladislav,
Mishina Elena,
Sherstyuk Natalia,
Bush Alexander,
Ovchinnikov Andrey,
Agranat Mikhail
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000460
Subject(s) - germanate , materials science , terahertz radiation , polarization (electrochemistry) , electric field , phonon , ferroelectricity , doping , excitation , silicon , induced polarization , optics , optoelectronics , condensed matter physics , physics , chemistry , quantum mechanics , dielectric , electrical resistivity and conductivity
The processes of dynamic polarization switching induced by the strong electric field of a nearly single‐cycle terahertz (THz) pulse are studied in a classical ferroelectric silicon‐doped lead germanate single crystal, Pb 5 (Ge 0.74 Si 0.26 ) 3 O 11 , in THz pump–second‐harmonic‐generation (SHG) probe geometry depending on the pulse electric field strength (0.05–15.6 MV cm −1 ). Since the pump parameters correspond to the region of phonon excitations for a given material, THz‐induced polarization is explained by a dynamic change in the ferroelectric order parameter. Numerical solutions of the Landau–Khalatnikov equation using the thermodynamic potential constants for this material show that the effect of powerful THz pulses leads to polarization modulations and a strong nonlinear response, and is in good agreement with the experimental results. Oscillations of the nonlinear optical response after the end of the THz pulse are found, which can be associated with the excitation of the phonon mode in the crystal.