Premium
Photosensitive Complementary Inverters Composed of n‐Channel ReS 2 and p‐Channel Single‐Walled Carbon Nanotube Field‐Effect Transistors
Author(s) -
Jeong Jinheon,
Seo Seung Gi,
Kim Seung Yeob,
Jin Sung Hun
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000420
Subject(s) - materials science , optoelectronics , carbon nanotube , transistor , spice , field effect transistor , band gap , carbon nanotube field effect transistor , nanotechnology , electrical engineering , voltage , engineering
For robustness on security and ultralow power consumption for Internet of Things (IoT) sensors, including ultraminiaturization for high chip density, 2D multilayered ReS 2 field‐effect transistors (FETs) combined with photoinsensitive single‐walled carbon nanotube (SWNT) FETs are demonstrated for application in light‐to‐frequency (LTF) conversion circuits. Herein, multilayered ReS 2 FETs with a direct bandgap (≈1.5 eV) have discernible photoresponsivity of ≈17 A W −1 for red and ≈128 A W −1 for green, respectively, with photodetectivity (≈10 9 Jones), leading to excellent operation for photosensitive inverters, partly associated with the photoinsensitive SWNT FETs for p‐channel devices. Moreover, the electrical parameters for photosensitive complementary inverters, according to different wavelengths in the dark and under, red ( λ R = 660 nm), green ( λ G = 530 nm), and blue ( λ B = 450 nm) light, are experimentally extracted, and their SPICE simulation‐based validation on working principles of ring oscillators (ROs) is confirmed under light illumination. More impressively, ultralow power consumption for the proposed scheme is achieved due to both the direct bandgap and the large‐energy bandgap, as compared with conventional multilayered MoS 2 FET‐based photosensitive inverters, rationally validating the promising opportunity for applications in the envisioned IoT sensor systems.