Photogalvanic‐Effect‐Induced Spin‐Polarized Current in Defective Silicane with H Vacancies

The spin photocurrent of defective‐silicane‐based photoelectric devices is studied using non‐equilibrium Green's function with first‐principles density functional theory. The calculations reveal that the silicane with H vacancies is a ferromagnetic (FM) semiconductor with a 0.27 μ B magnetic moment on the unhydrogenated Si atom. Due to the unique electronic structure, the directions and spin polarizations of the spin photocurrents can be effectively tuned by the polarization/phase angles or the photon energy ( E ph ) of the incident illumination. Especially, the 100% spin‐polarized photocurrents can be induced, as the E ph is 1.2–2.2 eV for both linearly polarized light (LPL) or circularly polarized light (CPL). Furthermore, the pure spin currents can be obtained by the CPL, as the E ph is 2.6 eV. These results indicate that defective silicane is a promising spintronic material.