Premium
Photogalvanic‐Effect‐Induced Spin‐Polarized Current in Defective Silicane with H Vacancies
Author(s) -
Fu Zhentao,
Yan Pinglan,
Li Jin,
He Chaoyu,
Ouyang Tao,
Zhang Chunxiao,
Tang Chao,
Zhong Jianxin
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000395
Subject(s) - photocurrent , spintronics , spin polarization , photoelectric effect , spin (aerodynamics) , materials science , polarization (electrochemistry) , photon energy , ferromagnetism , condensed matter physics , density functional theory , circular polarization , semiconductor , magnetic moment , atom (system on chip) , optoelectronics , photon , chemistry , optics , physics , electron , computational chemistry , quantum mechanics , microstrip , thermodynamics , computer science , embedded system
The spin photocurrent of defective‐silicane‐based photoelectric devices is studied using non‐equilibrium Green's function with first‐principles density functional theory. The calculations reveal that the silicane with H vacancies is a ferromagnetic (FM) semiconductor with a 0.27 μ B magnetic moment on the unhydrogenated Si atom. Due to the unique electronic structure, the directions and spin polarizations of the spin photocurrents can be effectively tuned by the polarization/phase angles or the photon energy ( E ph ) of the incident illumination. Especially, the 100% spin‐polarized photocurrents can be induced, as the E ph is 1.2–2.2 eV for both linearly polarized light (LPL) or circularly polarized light (CPL). Furthermore, the pure spin currents can be obtained by the CPL, as the E ph is 2.6 eV. These results indicate that defective silicane is a promising spintronic material.