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In‐plane Epitaxy of Bi 2 S 3 Nanowire Arrays for Ultrasensitive NIR Photodetectors
Author(s) -
Xu Xing,
Fan Chao,
Wang Yanguo,
Qi Zhuodong,
Dai Beibei,
Jiang Haotian,
Wang Shaowei,
Zhang Qinglin
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000384
Subject(s) - materials science , epitaxy , optoelectronics , nanowire , photodetector , heterojunction , responsivity , semiconductor , substrate (aquarium) , nanotechnology , layer (electronics) , oceanography , geology
The direct growth of semiconductor nanowire (NW) arrays horizontally aligned on a substrate is critically important for the applications of NWs in electronic or optoelectronic devices at the circuit level. The strict requirement of lattice matching between a substrate and a material in the covalent epitaxy of crystals makes the wire arrays be grown on the substrates only with similar lattice parameters. Herein, a van der Waals epitaxy route is developed to realize the in‐plane growth of large‐scale Bi 2 S 3 NW arrays on mica with a large lattice mismatch. The orthorhombic Bi 2 S 3 NWs grow epitaxially with the axial direction of⟨ 001 ⟩Bi 2 S 3along the six symmetric directions of the mica. Transmission electron microscope measurements show that the epitaxial relationships are[ 001 ]Bi 2 S 3| | [ 100 ] micaand[ 3 2 ¯ 0 ]Bi 2 S 3| | [ 010 ] micaalong the length and width directions of the wires, respectively. More importantly, photodetectors based on Bi 2 S 3 NWs show a wide photoresponse spectrum range from 500 to 980 nm. A high responsivity (5233 A W −1 ) and a specific detectivity (1.8 × 10 12 Jones) are achieved under 830 nm light irradiation with ultralow intensity (64 nW cm −2 ). In addition, the photodetectors exhibit high stability with at least 48 day storage in ambient atmosphere or with 1000 times bending.