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High‐Stability and Low‐Noise Multilevel Switching in In 3 SbTe 2 Material for Phase Change Photonic Memory Applications
Author(s) -
Arjunan Mozhikunnam Sreekrishnan,
Saxeishant,
Mondal Anirban,
Dixit Tejendra,
Adarsh Kumaran Nair Valsala Devi,
Manivannan Anbarasu
Publication year - 2021
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000354
Subject(s) - materials science , nanosecond , photonics , raman spectroscopy , stability (learning theory) , noise (video) , optoelectronics , phase (matter) , thin film , laser , optics , nanotechnology , physics , computer science , quantum mechanics , machine learning , image (mathematics) , artificial intelligence
Herein, eight uniform optical states (3 bit) are demonstrated by irradiating nanosecond laser pulses on thin In 3 SbTe 2 films having high stability (260 °C), revealing at least 1% reflectivity contrast between any two consecutive states with strikingly low noise variation of 0.18% at each level, which is almost a 50% lower value compared to Ge 2 Sb 2 Te 5 and AgInSbTe materials, revealing the two times enhanced signal‐to‐noise ratio of the In 3 SbTe 2 material. Furthermore, a systematic structural evolution during multilevel switching is investigated using confocal Raman spectroscopic studies. The experimental findings demonstrate low‐noise yet highly stable multilevel switching toward the development of reliable phase change photonic memory devices.