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Diamond p–i–n Diode with Nitrogen Containing Intrinsic Region for the Study of Nitrogen‐Vacancy Center Electroluminescence
Author(s) -
Lobaev Mikhail Aleksandrovich,
Radishev Dmitry Borisovich,
Bogdanov Sergey Aleksandrovich,
Vikharev Anatoly Leontievich,
Gorbachev Alexey Mikhailovich,
Isaev Vladimir Aleksandrovich,
Kraev Stanislav Alekseevich,
Okhapkin Andrey Igorevich,
Arhipova Ekaterina Aleksandrovna,
Drozdov Mikhail Nikolaevich,
Shashkin Vladimir Ivanovich
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000347
Subject(s) - electroluminescence , diode , materials science , photoluminescence , optoelectronics , diamond , spectral line , vacancy defect , emission spectrum , nitrogen vacancy center , center (category theory) , physics , chemistry , crystallography , nuclear magnetic resonance , nanotechnology , layer (electronics) , astronomy , composite material
The results of a study of diamond p–i–n diode with a nitrogen‐doped intrinsic region on a substrate with the (001) orientation are presented. When the forward voltage is applied to the diode, a high current density of about 10 3  A cm −2 is obtained. Two narrow lines are detected in the electroluminescence spectrum of the p–i–n diode: one at a wavelength of 575 nm corresponding to the emission of the NV center (nitrogen‐vacancy color center) in a neutral charge state, and the second narrow line, which previously has not been observed in the electroluminescence spectra, at a wavelength of 533 nm. The line widths at room temperature are about 7 and 3 nm, respectively. By comparing the emission intensities of NV centers using the same optical registration system for electroluminescence and photoluminescence, the emission rate of NV centers during electroluminescence is estimated to be about 10 6 photon s −1 , which allows to consider a diode of such design as a possible candidate to create single‐photon sources.

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