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Dielectric/Semiconductor Interfacial p‐Doping: A New Technique to Fabricate Solution‐Processed High‐Performance 1 V Ambipolar Oxide Transistors
Author(s) -
Chourasia Nitesh K.,
Sharma Anand,
Pal Nila,
Biring Sajal,
Pal Bhola N.
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000268
Subject(s) - thin film transistor , materials science , ambipolar diffusion , dielectric , doping , optoelectronics , gate dielectric , semiconductor , electron mobility , transistor , oxide , nanotechnology , layer (electronics) , electron , electrical engineering , voltage , physics , engineering , quantum mechanics , metallurgy
Herein, dielectric/semiconductor interfacial p‐doping is used to develop a high‐carrier‐mobility and balanced ambipolar tin oxide (SnO 2 ) thin‐film transistor (TFT). To introduce this interfacial doping, TFTs are fabricated by using two different ion‐conducting oxide dielectrics containing trivalent atoms. These ion‐conducting dielectrics are LiInO 2 and LiGaO 2 containing a mobile Li + ion that reduces the operating voltage of these TFTs to ≤2.0 V. During SnO 2 thin film deposition, the interfacial SnO 2 layer is p‐doped by an In or Ga atom of the gate dielectric and therefore, hole conduction is facilitated in the channel of the TFT. To realize this interfacial doping phenomenon, a reference TFT is fabricated with a Li 2 ZnO 2 dielectric that contains a divalent zinc atom. Comparative electrical data indicate that TFTs with LiInO 2 and LiGaO 2 dielectrics are ambipolar in nature, whereas the TFT with a Li 2 ZnO 2 dielectric is a unipolar n‐channel transistor, corroborating the interfacial doping of SnO 2 . Most interestingly, using a LiInO 2 dielectric, a 1.0 V balanced ambipolar TFT with high electron and hole mobility values of 7 and 8 cm 2 V −1 s −1 , respectively, can be fabricated, with an on/off ratio > 10 2 for both operations. The TFT with a LiInO 2 dielectric is utilized successfully to fabricate a low‐voltage complementary metal–oxide–semiconductor (CMOS) inverter.