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Negative and Positive Photoconductivity and Memristor Effect in Alloyed GeO[SiO] Films Containing Ge Nanoclusters
Author(s) -
Volodin Vladimir A.,
Kamaev Gennadiy N.,
Vergnat Michel
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000165
Subject(s) - nanoclusters , materials science , amorphous solid , optoelectronics , annealing (glass) , photoconductivity , electrode , sputtering , indium tin oxide , sputter deposition , vacuum evaporation , nanotechnology , thin film , metallurgy , crystallography , chemistry
Metal–insulator–semiconductor (MIS) structures based on GeO[SiO] films containing amorphous Ge nanoclusters are fabricated on n + ‐Si(100) substrate by co‐evaporation of GeO 2 and SiO powders in ultra‐high vacuum. Indium tin oxide (ITO) top electrodes are deposited using magnetron sputtering. According to Raman data, annealing at 500 °C for 20 min leads to an increase in amorphous Ge volume. Current–voltage characteristics provide clear evidence of resistive switching (memristor effect) in the annealed MIS structure after the forming procedure. Both negative and positive photoconductivities are observed in the MIS structure before forming when both negative/positive voltage biases are applied to the top ITO electrode. This is possibly due to light‐stimulated recharging of holes originating from Ge‐nanoclusters, which act as traps.