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Solution Processed Organic Transistors on Polymeric Gate Dielectric with Mobility Exceeding 15 cm 2 V −1 s −1
Author(s) -
Bilgaiyan Anubha,
Cho Seung-Il,
Abiko Miho,
Watanabe Kaori,
Mizukami Makoto
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000156
Subject(s) - thin film transistor , organic semiconductor , materials science , electron mobility , dielectric , gate dielectric , parylene , optoelectronics , organic field effect transistor , transistor , thiophene , polymer , analytical chemistry (journal) , nanotechnology , field effect transistor , chemistry , electrical engineering , organic chemistry , engineering , layer (electronics) , voltage , composite material
Herein, 6,6′ bis (trans‐4‐pentylcyclohexyl)‐dinaphtho[2,1‐ b :2′,1′‐ f ]thieno[3,2‐ b ]thiophene (5H‐21DNTT)—a solution‐processable derivative of DNTT—is characterized and studied for its potential as a crystalline solution‐processed organic semiconductor to achieve high mobility and stable organic thin‐film transistor (OTFT) operation. The performance of a bottom‐gate, bottom‐contact OTFT with a 5H‐21DNTT semiconductor is analyzed with different polymeric organic gate dielectrics via various solution‐processed techniques. In comparison to other polymeric gate dielectrics, Parylene C exhibited a superior performance for 5H‐21DNTT OTFT devices, and the OTFT devices show a remarkable average mobility of 10.9 cm 2 V −1 s −1 , as well as a maximum mobility exceeding 15 cm 2 V −1 s −1 , with a 100% reliability factor.