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Oxygen Incorporation Kinetics in Vicinal m (10−10) Gallium Nitride Growth by Metal‐Organic Vapor Phase Epitaxy
Author(s) -
Yosho Daichi,
Shintaku Fumiya,
Inatomi Yuya,
Kangawa Yoshihiro,
Iwata Jun-Ichi,
Oshiyama Atsushi,
Shiraishi Kenji,
Tanaka Atsushi,
Amano Hiroshi
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000142
Subject(s) - vicinal , epitaxy , gallium nitride , gallium , diffusion , oxygen , metal , materials science , kinetics , metalorganic vapour phase epitaxy , phase (matter) , nitride , analytical chemistry (journal) , chemistry , inorganic chemistry , nanotechnology , thermodynamics , metallurgy , organic chemistry , physics , layer (electronics) , quantum mechanics
The oxygen incorporation kinetics of vicinal m (10−10) gallium nitride (GaN) growth during metal‐organic vapor phase epitaxy is clarified using a diffusion equation‐based approach that incorporates diffusion potentials obtained by large‐scale density functional theory (DFT) calculations. A diffusion model based on the Burton, Cabrera and Frank (BCF) theory is proposed, and then, the oxygen concentration in the epitaxial films is calculated quantitatively. The calculation results agree with the experimental tendency that the oxygen concentration in the − c 5° off m ‐GaN epilayers is lower than that in the + c 5° off m ‐GaN epilayers. Then, the off‐angle dependence of oxygen incorporation in vicinal m ‐GaN growth is predicted.