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Conductivity Modulation of a Slit Channel in a Monolayer MoS 2 Homostructure
Author(s) -
Kong Xiangcong,
Li Tao,
Xu Yeming,
Cao Lin,
Lu Minghui,
Wu Di,
Min Tai
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000082
Subject(s) - slit , monolayer , materials science , conductivity , transistor , dangling bond , optoelectronics , enhanced data rates for gsm evolution , field effect transistor , fabrication , self assembled monolayer , threshold voltage , voltage , optics , nanotechnology , silicon , electrical engineering , physics , computer science , engineering , telecommunications , alternative medicine , medicine , pathology , quantum mechanics
The 1D‐edge structure can potentially demonstrate higher conductivity in 2D materials because of dangling bonds and symmetry breaking. Studies use edge contact to circumvent the contact‐scaling problem in 2D field‐effect transistors (FETs) but with a rather complicated device fabrication process. Herein, a new concept is proposed directly using edges as the modulated channel, realized in a simple monolayer MoS 2 homostructure. When two 1D edges lie close to each other, they form a slit, which may demonstrate distinctive electronic features. The local conductivity along naturally and artificially created slits in monolayer MoS 2 is evaluated using noninvasive scanning microwave impedance microscopy with high spatial resolution. It is found that the two edges of the slits can show dramatically different conductivity due to the potential difference between the two parts separated by the slit, which can be controlled independently by the back‐gate voltage and scanning conditions. Even when the back‐gate voltage is off, the potential difference across the slit can retain, which makes it nonvolatile. This feature enables a MoS 2 flake to work as a homostructure device, in which the slit can perform as an efficient channel. The findings provide an alternative perspective of using slit as a new approach for 2D electronic devices.