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Topological Surface States‐Induced Perpendicular Magnetization Switching in Pt/Co/Bi 2 Se 3 Heterostructures
Author(s) -
Zhang Xu,
Cui Baoshan,
Mao Jian,
Yun Jijun,
Yan Ze,
Chang Meixia,
Zuo Yalu,
Xi Li
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.202000033
Subject(s) - spintronics , topological insulator , ferromagnetism , condensed matter physics , heterojunction , surface states , materials science , magnetization , spin (aerodynamics) , perpendicular , topology (electrical circuits) , surface (topology) , physics , magnetic field , quantum mechanics , geometry , mathematics , combinatorics , thermodynamics
Recently, the topological insulators (TIs) with topological surface states (TSS) exhibiting large spin–orbit torques (SOTs) in topological insulators/ferromagnetic (TIs/FM) systems have been a hot spot research in spintronics. Herein, the effective spin Hall angles ( θ SH eff) in perpendicularly magnetized Pt/Co/Bi 2 Se 3 stacks with different thicknesses of the Bi 2 Se 3 layers are investigated by the harmonic Hall resistance measurements. The results show that theθ SH efffor the TIs/FM heterostructures is substantially larger than the previously reported heavy metal/ferromagnetic (HM/FM). Moreover,θ SH effkeeps constant with the value around 0.35 in Pt/Co/Bi 2 Se 3 stacks with the variation of the thickness of Bi 2 Se 3 from 3.0 to 15.0 nm, indicating that the SOTs are mainly derived from the contribution of the TSS of Bi 2 Se 3 rather than the interfacial Rashba effect and/or bulk spin Hall effect. The results confirm that TIs with unique spintronic texture can play a crucial role in spintronics applications.