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Fabrication and Characterization of an InAs(Sb)/In x Ga 1− x As y Sb 1− y Type‐II Superlattice
Author(s) -
Du Peng,
Fang Xuan,
Gong Qian,
Li Jiaming,
Kou Xufeng,
Zhao Hongbin,
Wang Xiaohua
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201970045
Subject(s) - superlattice , indium , materials science , fabrication , monolayer , optoelectronics , alloy , indium arsenide , characterization (materials science) , condensed matter physics , gallium arsenide , nanotechnology , physics , metallurgy , medicine , alternative medicine , pathology
A novel InAs(Sb)/In x Ga 1− x As y Sb 1− y superlattice with high‐indium‐content In x Ga 1− x As y Sb 1− y in the immiscibility gap has been designed and fabricated through the fractional monolayer alloy growth method by Peng Du et al. (article number 1900474 ). Compared to the InAs/GaSb superlattice, this neoteric superlattice InAs(Sb)/In x Ga 1− x As y Sb 1− y exhibits a flexible miniband engineering ability and high luminescence property, which would have great potential applications in infrared optoelectronic devices.