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Giant V oc Boost of Low‐Temperature Annealed Cu(In,Ga)Se 2 with Sputtered Zn(O,S) Buffers
Author(s) -
Zutter Marco,
Virtuoso Jose,
Anacleto Pedro,
Yasin Liam,
Alves Marina,
Madeira Miguel,
Bondarchuk Oleksandr,
Mitra Saibal,
Fuster Signes David,
Garcia Jorge M.,
Briones Fernando,
Waechter Rolf,
Kiowski Oliver,
Hariskos Dimitrios,
Colombara Diego,
Sadewasser Sascha
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201970036
Subject(s) - conduction band , annealing (glass) , x ray photoelectron spectroscopy , ultraviolet photoelectron spectroscopy , materials science , work function , analytical chemistry (journal) , recombination , optoelectronics , solar cell , open circuit voltage , capacitance , voltage , chemistry , metal , electron , metallurgy , electrical engineering , physics , electrode , nuclear magnetic resonance , biochemistry , quantum mechanics , chromatography , gene , engineering
An open circuit voltage boost from 0.33 to 0.50 V is reported by M. Zutter et al. (article no. 1900145 ) for solar cells comprising industrial‐grade Cu(In,Ga)Se 2 absorbers and sputtered Zn(O,S) buffer layers. The research shows that thermal annealing up to 200 °C shifts the dominant recombination pathway from interface to bulk. Concurrently, ultraviolet‐photoelectron spectroscopy reveals an increase of the work function of Zn(O,S) films deposited on Cu(In,Ga)Se 2 . The change of conduction band offset and the observed wavelength‐dependent improvement of charge‐carrier collection are consistent with solar cell capacitance simulations. The study identifies future steps needed to achieve efficient cells based on all‐vacuum processed components.