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Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties (Phys. Status Solidi RRL 5/2019)
Author(s) -
Wang Zhanpeng,
Zhang ShiRui,
Zhou Li,
Mao JingYu,
Han SuTing,
Ren Yi,
Yang JiaQin,
Wang Yan,
Zhai Yongbiao,
Zhou Ye
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201970022
Subject(s) - resistive random access memory , materials science , semiconductor , transistor , optoelectronics , memristor , resistive touchscreen , nanotechnology , computer science , electronic engineering , electrical engineering , voltage , engineering
In article number 1800644 , Su‐Ting Han, Ye Zhou and coworkers present a critical review on the recent developments of functional memories. First, three‐terminal field effect transistor memory is introduced, while metal oxides, organic semiconductors and 2D materials are mainly discussed for the construction of the semiconductor channel. The resistive random access memory (ReRAM) is then presented. Resistive switching phenomena exist in various kinds of materials such as oxides, polymers and 2D materials. The researches on these materials and their applications on ReRAM are reviewed systematically. In the final part, novel photo‐tunable memory is introduced. Based on the basic structure of these memory devices, photo‐tunable materials can be further used to bring in light modulation.