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Evidence for Thermal‐Based Transition in Super‐Lattice Phase Change Memory (Phys. Status Solidi RRL 4/2019)
Author(s) -
Boniardi Mattia,
Boschker Jos E.,
Momand Jamo,
Kooi Bart J.,
Redaelli Andrea,
Calarco Raffaella
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201970021
Subject(s) - phase change memory , reset (finance) , materials science , lattice (music) , phase transition , stack (abstract data type) , power consumption , condensed matter physics , power (physics) , transition layer , set (abstract data type) , optoelectronics , computer science , thermodynamics , physics , nanotechnology , layer (electronics) , acoustics , financial economics , economics , programming language
A reduction of the SET and RESET currents by more than 60% with respect to conventional GeTe‐Sb 2 Te 3 (GST) alloys is demonstrated by using Phase Change Memory (PCM) cells containing (GeTe‐Sb 2 Te 3 )/Sb 2 Te 3 Super‐Lattices (SLs), see article no. 1800634 by Mattia Boniardi et al. Moreover, the authors' SL PCM devices feature similar characteristics in terms of the memory transition as conventional memory cells based on GST, even though showing reduced power consumption, indicative of an efficiency augmented SET‐to‐RESET transition. The reduced power consumption is attributed to an increased thermal resistance of the SL stack with respect to the bulk GST alloy.