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Locally‐Strain‐Induced Heavy‐Hole‐Band Splitting Observed in Mobility Spectrum of p‐Type InAs Grown on GaAs
Author(s) -
Wróbel Jarosław,
Umana-Membreno Gilberto A.,
Boguski Jacek,
Sztenkiel Dariusz,
Michałowski Paweł Piotr,
Martyniuk Piotr,
Faraone Lorenzo,
Wróbel Jerzy,
Rogalski Antoni
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900604
Subject(s) - molecular beam epitaxy , condensed matter physics , materials science , substrate (aquarium) , electron mobility , strain (injury) , optoelectronics , doping , epitaxy , layer (electronics) , physics , nanotechnology , medicine , oceanography , geology
High‐quality Be‐doped InAs layer grown by molecular beam epitaxy on GaAs substrate has been examined via magnetotransport measurements and high‐resolution quantitative mobility spectrum analysis (HR‐QMSA) in the range of 5–300 K and up to 15 T magnetic field. The results show four‐channel conductivity and essential splitting of the most populated hole‐like channel below 55 K. It is concluded that origin of such effect results from the locally strain‐induced interlayer, which direct observation is difficult or impossible via alternative techniques. Based on the magnetotransport data analysis, the multilayer model is proposed, which is implemented into nextnano simulation, giving the proof of the argumentation correctness. These results indicate potential usefulness of HR‐QMSA technique even in the degeneration statistic regime.