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High‐Performance Polymer Photodetector Using the Non‐Thermal‐and‐Non‐Ultraviolet–Ozone‐Treated SnO 2 Interfacial Layer
Author(s) -
Deng Rui,
Yan Chao,
Deng Yadan,
Hu Yufeng,
Deng Zhenbo,
Cui Qiuhong,
Lou Zhidong,
Hou Yanbing,
Teng Feng
Publication year - 2020
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900531
Subject(s) - materials science , optoelectronics , photodetector , quantum efficiency , photocurrent , dark current , indium tin oxide , photoactive layer , responsivity , ultraviolet , active layer , photoconductivity , electrode , layer (electronics) , nanotechnology , energy conversion efficiency , polymer solar cell , chemistry , thin film transistor
In organic or perovskite photovoltaic‐type devices, to improve device performance, the thermal and ultraviolet–ozone (UVO) treatments are usually critical for the metal oxide film fabrication by removing the interfacial layer induced defects. However, the defects might play the opposite role in photoconductive photodetectors, where the defect‐induced photogenerated charge accumulation can lead to a tunneling current. Herein, a high‐performance solution‐processed broadband organic photodetector (OPD) in the visible wavelength is realized and characterized by introducing the non‐thermal‐and‐non‐UVO‐treated SnO 2 nanoparticle film between the indium tin oxide (ITO) electrode and the active layer of the poly(3‐hexylthiophene) (P3HT):phenyl‐C61‐butyric‐acid‐methyl‐ester (PC 61 BM) blend. The untreated SnO 2 nanoparticle layer can efficiently block the external charge injection, which considerably reduces the dark current density. Under illumination, the photogenerated charges are accumulated at the interface between the SnO 2 layer and the active layer, and thus contribute a tunneling injection, resulting in a significantly high photocurrent. Therefore, the OPD shows a high performance in every figure of merit: external quantum efficiency (EQE) of 1430%, responsivity of 6.97 A W −1 , detectivity of 2.29 × 10 13 Jones, and −3 dB bandwidth of 2.8 MHz. The solution‐processed high‐performance photodetectors without thermal and UVO treatments are highly compatible with low cost, flexible, and large‐area electronics.