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Synthesis of Millimeter‐Scale Continuous WS 2 Film by Mitigating Poisoning of H 2 on WO 2.9 Precursor
Author(s) -
Wan Zhichen,
Wu Yingjie,
Yu Wenzhi,
Dong Yemin,
Huang Yamin,
Bao Qiaoliang
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900480
Subject(s) - chemical vapor deposition , nanotechnology , materials science , hydrogen , millimeter , transition metal , semiconductor , thin film , catalysis , chemistry , optoelectronics , physics , organic chemistry , astronomy
Atomically thin transition metal dichalcogenides (TMDs) exhibit vast variety of intriguing properties such as direct bandgap and strong spin‐orbit coupling, and thus are widely regarded by the scientific community as potential novel materials for the future semiconductor industry. One challenge for utilizing the materials is to synthesize samples with large size, which is needed to realize practical applications. Understanding of the role of hydrogen, an important gas in the chemical vapor deposition (CVD) reaction for producing layered crystals of TMDs due to its reduction nature, remains elusive. Herein, the successful synthesis of millimeter‐scale continual WS 2 film by delicately mitigating the poisoning effect of H 2 on the WO 2.9 precursor is reported. It is found that at above 450 °C hydrogen can transform WO 2.9 into species that are harder to sublime and feed the growth of layered WS 2 . The unraveling of poisoning mechanism of hydrogen may provide useful guidance for the growth of other TMDs in large size so as to meet the needs of variant applications.