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Atomic Layer Deposition Alumina‐Mediated Graphene Transfer for Reduced Process Contamination
Author(s) -
Shivayogimath Abhay,
Eriksson Lars,
Whelan Patrick R.,
Mackenzie David M. A.,
Luo Birong,
Bøggild Peter,
Booth Timothy J.
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900424
Subject(s) - graphene , atomic layer deposition , materials science , graphene foam , fabrication , layer (electronics) , nanotechnology , graphene nanoribbons , graphene oxide paper , deposition (geology) , copper , doping , substrate (aquarium) , optoelectronics , metallurgy , sediment , medicine , paleontology , oceanography , alternative medicine , pathology , geology , biology
Herein, an approach for integrating gate insulator deposition and graphene transfer steps in the fabrication of graphene field‐effect devices is reported. A thin layer of Al 2 O 3 is deposited by atomic layer deposition (ALD) onto as‐grown graphene on copper, where the improved surface wettability of graphene on copper aids in obtaining a uniform deposition of the ALD layer. The ALD Al 2 O 3 /graphene stack is then mechanically delaminated from the copper surface and transferred onto the desired target substrate. An ALD layer thickness between 20 and 30 nm is optimal for facilitating such transfer. The ALD layer protects graphene from process contamination during subsequent transfer and device fabrication, resulting in reduced doping in measured field‐effect devices.