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The Effect of Electron Irradiation on Cesium Fluoride‐Free and Cesium Fluoride‐Treated Cu(In 1− x ,Ga x )Se 2 Solar Cells
Author(s) -
Khatri Ishwor,
Lin Tzu-Ying,
Nakada Tokio,
Sugiyama Mutsumi
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900415
Subject(s) - copper indium gallium selenide solar cells , irradiation , passivation , fluence , materials science , electron beam processing , fluoride , caesium , thin film , lithium fluoride , analytical chemistry (journal) , radiochemistry , chemistry , inorganic chemistry , nanotechnology , layer (electronics) , physics , chromatography , nuclear physics
Herein, the effects of electron irradiation on cesium fluoride (CsF)‐free and CsF‐treated Cu(In 1− x ,Ga x )Se 2 (CIGS) solar cells with fluence from 1 × 10 13 to 1 × 10 17 cm −2 are investigated. Both CsF‐free and CsF‐treated CIGS solar cells exposed to fluence up to 3 × 10 15 cm −2 show self‐healing properties, due to the soaking effect from electron bombardment. This feature indicates the robustness of CIGS solar cells for long‐term space explorations. On the other hand, electron irradiation with fluence above 1 × 10 16 cm −2 suppresses the solar cell performance of both CsF‐free and CsF‐treated samples, which is expected to be due to the formation of irradiation‐induced defects on the CIGS thin film. This result suggests that the formation of irradiation‐induced defects is independent of the incorporation of heavier alkali metals into the CIGS thin films. The defect passivation and/or introduction rates at different fluences are investigated.