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Transient Resistive Switching for Nonvolatile Memory Based on Water‐Soluble Cs 4 PbBr 6 Perovskite Films
Author(s) -
Chen Ruqi,
Xu Jun,
Lao Meimei,
Liang Zhiwei,
Chen Yukai,
Zhong Chujie,
Huang Linjun,
Hao Aize,
Ismail Muhammad
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900397
Subject(s) - perovskite (structure) , optoelectronics , ohmic contact , non volatile memory , layer (electronics) , materials science , halide , transient (computer programming) , dielectric , thin film , nanotechnology , chemistry , inorganic chemistry , computer science , crystallography , operating system
All‐inorganic halide perovskite Cs 4 PbBr 6 thin films are synthesized at low temperature through a facile chemical deposition method. The deposited films are implemented as a dielectric and dissolvable layer with the Au/Cs 4 PbBr 6 /PEDOT:PSS/ITO configuration for transient memory electronic devices. The bipolar resistive switching phenomena, good switching cycling (endurance), and long data retention (10 4 s) are demonstrated on as‐grown nonvolatile memory device to evaluate its high stability, reliability, and reproducibility. The I–V relationship shows ohmic conduction behavior at the low‐resistance state, whereas space charge limited current mechanism is dominating at the high‐resistance state. The conductive filaments formation and rupture, accompanied by Br − vacancies in Cs 4 PbBr 6 layer, are employed to elucidate switching mechanism. More interestingly, the soluble insulation layer of the devices is quickly dissolved and the color of films transforms from yellow to white as fast as 2 s in deionized water, which exhibits good transient performance. Moreover, the electrical characteristics as well as optical properties vanish absolutely to further demonstrate the abovementioned transition after the memory devices dissolve in deionized water. This work offers a novel way to prepare disposable electronic memory devices by utilizing cheap perovskite‐based materials for transient electronics memory area as well as implantable electronics systems.