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Photosensitive Complementary Inverters Based on n‐Channel MoS 2 and p‐Channel MoTe 2 Transistors for Light‐to‐Frequency Conversion Circuits
Author(s) -
Seo Seung Gi,
Jin Sung Hun
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900317
Subject(s) - molybdenum disulfide , materials science , spice , optoelectronics , electronic circuit , transistor , noise margin , light emitting diode , robustness (evolution) , molybdenum , electronic engineering , electrical engineering , computer science , voltage , engineering , chemistry , biochemistry , metallurgy , gene
Photosensitive complementary inverters, composed of multilayered molybdenum disulfide (MoS 2 ) and molybdenum ditelluride (MoTe 2 ), are demonstrated for the applications that require low power consumption and excellent signal‐to‐noise ratio (SNR). The photosensitive characteristics of MoS 2 , along with the negligible photosensitivity of MoTe 2 , successfully render them applicable to the light‐to‐frequency conversion circuits that enable high SNR immunity. Under blue light‐emitting diodes (LEDs), the low noise margin and transition width for the voltage transfer characteristics in complementary inverters significantly improve from 1.29 to 1.49 V and 0.24 to 0.31 V, respectively, as compared with those of inverters in the dark. The experimental demonstration of photosensitive inverters and their electrical validations on proposed concepts, supported from SPICE (i.e., simulation program with integrated circuit emphasis) simulation, are systematically obtained, substantiating that this platform can be one of the core parts for future Internet of Things (IOT) applications, which simultaneously demand both ultralow power and robustness on security.