Premium
Stark‐Localization‐Limited Franz–Keldysh Effect in InAlAs Digital Alloys
Author(s) -
Yuan Yuan,
Zheng Jiyuan,
Sun Keye,
Jones Andrew H.,
Rockwell Ann K.,
March Stephen D.,
Shen Yang,
Bank Seth R.,
Campbell Joe C.
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900272
Subject(s) - alloy , electric field , absorption edge , absorption (acoustics) , enhanced data rates for gsm evolution , condensed matter physics , semiconductor , materials science , stark effect , field (mathematics) , optoelectronics , telecommunications , physics , metallurgy , quantum mechanics , band gap , mathematics , computer science , composite material , pure mathematics
The optical absorption characteristics of the InAlAs digital alloy semiconductor are investigated. The external quantum efficiency of the InAlAs digital alloy is compared with that of the In 0.52 Al 0.48 As random alloy. Unlike the random alloy, the digital alloy exhibits electric‐field‐induced Stark localization, which increases the optical absorption and suppresses the Franz–Keldysh red shift of the optical absorption edge.