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Sol–Gel‐Derived Spinel Ag‐Co 3 O 4 Nanocomposite Thin Films for Resistive and Magnetization Switching Applications
Author(s) -
Yao Chuangye,
Ismail Muhammad,
Hao Aize,
Kumar Thatikonda Santhosh,
Huang Wenhua,
Qin Ni,
Bao Dinghua
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900168
Subject(s) - nanocomposite , spinel , materials science , magnetization , resistive random access memory , sol gel , thin film , spin coating , valence (chemistry) , oxygen , annealing (glass) , resistive touchscreen , nanotechnology , chemical engineering , optoelectronics , electrode , composite material , metallurgy , electrical engineering , chemistry , magnetic field , physics , organic chemistry , quantum mechanics , engineering
Sol–gel‐derived spinel Ag‐Co 3 O 4 nanocomposite thin films are synthesized using a spin‐coating method to investigate the resistive and magnetization switching effect. Compared with a pure Co 3 O 4 thin‐film device, an Ag‐Co 3 O 4 nanocomposite thin‐film device reveals significant improvement in switching parameters. Uniformity and improvement in switching characteristics are attributed to the enhancement of local electric field and generation of oxygen vacancies by optimum Ag contents. Temperature dependence of resistive switching and magnetization analysis illustrate that induced oxygen vacancies and conversion of cation valence states (Co 2+ and Co 3+ ) are responsible for repairing and rupturing of conductive filaments. The findings offer a feasible and low‐cost sol–gel technique to fabricate an Ag‐Co 3 O 4 nanocomposite‐based device for multifunctional resistive random access memory (RRAM) applications.