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Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate
Author(s) -
Zhang Yachao,
Su Kai,
Guo Rui,
Xu Shengrui,
Chen Dazheng,
Zhu Jiaduo,
Bao Weimin,
Zhang Jincheng,
Ning Jing,
Hao Yue
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900167
Subject(s) - materials science , dislocation , nucleation , stacking , chemical vapor deposition , graphene , optoelectronics , epitaxy , substrate (aquarium) , transmission electron microscopy , layer (electronics) , threading (protein sequence) , crystal (programming language) , semiconductor , nanotechnology , composite material , chemistry , biochemistry , oceanography , organic chemistry , protein structure , geology , computer science , programming language
High‐quality GaN film is grown on graphene with the underneath sputtered AlN modified layer using metal organic chemical vapor deposition. Due to the modulation effect of sputtered AlN on the surface potential and the chemical reactivity of graphene, the nucleation probability of GaN is significantly improved. The GaN epitaxial layer shows excellent crystal quality and surface morphology, and has very low threading dislocation density of 1.78 × 10 8 cm −2 . Furthermore, the mechanism of threading dislocation suppression is revealed according to the transmission electron microscope results. The improved nucleation probability and enhanced lateral growth mode lead to the formation of short‐range stacking faults in c ‐plane GaN, which block the propagation of threading dislocations along the growth direction. Moreover, the formation and evolution mechanism of the short‐range stacking faults are discussed. The results in this work not only offer a promising approach to propel the widespread application of GaN on graphene, but also provide a new idea for the regulation and suppression of defects in the growth of nitride semiconductors.