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High‐Speed Bipolar Switching of Sputtered Ge–Te/Sb–Te Superlattice iPCM with Enhanced Cyclability
Author(s) -
Mitrofanov Kirill V.,
Saito Yuta,
Miyata Noriyuki,
Fons Paul,
Kolobov Alexander V.,
Tominaga Junji
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900105
Subject(s) - phase change memory , materials science , alloy , superlattice , optoelectronics , reset (finance) , switching time , composite material , layer (electronics) , financial economics , economics
Ge–Sb–Te alloy based phase‐change memory devices have recently been shown to be switchable in a bipolar mode. However, to date bipolar switching has only been demonstrated at relatively low speeds (on the order of tens of µs), and with endurance limited to 10 4 switching cycles. In this work, in lieu of a Ge–Sb–Te alloy, fast and durable bipolar switching is demonstrated in interfacial phase change memory (iPCM). It is revealed that in iPCM devices, bipolar switching can be carried out at least a factor of 1000 times faster and with at least 1000 times greater endurance than in conventional Ge–Sb–Te alloy based phase‐change devices. Additionally, bipolar switching was found to exhibit a larger RESET to SET resistance ratio and lower power consumption compared to conventional Ge–Sb–Te alloy based devices.