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SiOC‐Accelerated Graphene Grown on SiO 2 /Si with Tunable Electronic Properties
Author(s) -
Garman Paul D.,
Yang Hao,
Yen YingChieh,
Yu Jianfeng,
Kwak Kwang Joo,
Malkoc Veysi,
Talesara Vishank V.,
Lee Ly J.,
Lu Wu
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900017
Subject(s) - graphene , materials science , wafer , silicone rubber , chemical vapor deposition , silicon , covalent bond , electron mobility , carbon fibers , nanotechnology , optoelectronics , chemical engineering , composite material , composite number , chemistry , organic chemistry , engineering
A facile method is developed for fast and high‐coverage graphene growth on silicon wafers with covalent bonding by using atmospheric pressure chemical vapor deposition (APCVD) with methane as the carbon source and high temperature silicone rubber as the silicon oxycarbide (SiOC) source. The SiOC transition layer can facilitate and accelerate the formation of graphene. The formation of graphene networks with strong covalent bonding provides a combination of unique properties including higher mechanical strength and lower friction coefficient than a silicon wafer, excellent electrical conductivity, and high carrier mobility up to 275 cm 2 V −1 s −1 .