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Synaptic and Digital Switching in Diffusion Effect‐Assisted Oxides for All‐Inorganic Flexible Memristor
Author(s) -
Zhang Wanli,
Mao Yanhu,
Duan Weijie
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900016
Subject(s) - memristor , materials science , voltage , optoelectronics , forgetting , switching time , process (computing) , low voltage , computer science , nanotechnology , electrical engineering , engineering , philosophy , linguistics , operating system
In this work, an all‐inorganic memristor based on In ion‐diffused Al 2 O 3 (IAO) is realized by low temperature solution method. Compared to single layer devices, the electrical properties of IAO‐based memristor are highly improved. In this device, both of synaptic and digital switching can be observed by controlling the applied voltage. At a low applied voltage, the memristor exhibits synaptic switching behavior including gradual switching, learning process, forgetting process, and relearning process. If a higher voltage is applied, the switching behavior is changed to digital bipolar switching which could be also archived in bending condition. The switching mechanism is dominated by oxygen vacancies modulation on concentration and formation energy. This novel device can be expected to open a new road for hybrid and printable circuits including synaptic and digital flexible memristors.