Premium
Optimization of Electrical Properties of MoS 2 Field‐Effect Transistors by Dipole Layer Coulombic Interaction With Trap States
Author(s) -
Chuai Xichen,
Yang Guanhua,
Wei Wei,
Wang Jiawei,
Shi Xuewen,
Lu Congyan,
Zhao Ying,
Su Yue,
Wu Quantan,
Geng Di,
Lu Nianduan,
Li Ling,
Liu Ming
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201900007
Subject(s) - materials science , dipole , transistor , threshold voltage , field effect transistor , electron , electric field , optoelectronics , electron mobility , layer (electronics) , voltage , molecular physics , nanotechnology , chemistry , physics , organic chemistry , quantum mechanics
The large negative threshold voltage is one of major electrical factors hindering potential applications of MoS 2 transistors in low‐power circuit systems. Here, a strategy by forming an electric dipole layer on the surface of MoS 2 is presented to optimize the threshold voltage in monolayer polycrystalline MoS 2 field‐effect transistors. The electric dipole in an inert non‐conjugated polymer, perfluoropolyether (PFPE), can interact with trapped electrons in the MoS 2 active layer and transfer the traps from shallow into deep states, which remarkably improves the threshold voltage. Otherwise, ab initio calculation and molecular dynamics simulation are employed to investigate the transport properties of MoS 2 with PFPE. The calculated results imply that localized electrons are dominantly affected by PFPE, while free electrons are irrelevant. This method with dipole layer provides a pathway to implementation of high‐performance MoS 2 transistors for future electronic applications.