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Functional Non‐Volatile Memory Devices: From Fundamentals to Photo‐Tunable Properties
Author(s) -
Wang Zhanpeng,
Zhang ShiRui,
Zhou Li,
Mao JingYu,
Han SuTing,
Ren Yi,
Yang JiaQin,
Wang Yan,
Zhai Yongbiao,
Zhou Ye
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800644
Subject(s) - resistive random access memory , semiconductor memory , von neumann architecture , computer science , memristor , flash memory , non volatile memory , computer memory , non volatile random access memory , flash (photography) , key (lock) , computer data storage , memory refresh , computer hardware , electrical engineering , engineering , art , computer security , voltage , visual arts , operating system
As one of the five basic components in a modern computer system, memory plays a key role in data storage while the Von Neumann architecture still occupies a principal position in modern digital era. With the rapid development of portable electronic devices, non‐volatile memories are of great importance in human's daily life. High‐performance memory devices are highly demanded, and novel materials applied to flash memory and resistive random access memory (ReRAM) have been widely investigated. The functionalities of memories can be broadened with the development of semiconductor technologies. As a facile and low‐power electromagnetic wave, light can be another modulation medium, which will not bring destructive operation and can enhance the device performance. In this review, the focus is on flash memory and ReRAM based on various functional materials as well as the recent development of photo‐tunable memories.