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Impact of Outer Shell Structure and Localization Effects on Charge Carrier Dynamics in GaAs/(In,Ga)As Nanowire Core–Shell Quantum Wells
Author(s) -
Küpers Hanno,
Corfdir Pierre,
Lewis Ryan B.,
Flissikowski Timur,
Tahraoui Abbes,
Grahn Holger T.,
Brandt Oliver,
Geelhaar Lutz
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800527
Subject(s) - nanowire , shell (structure) , luminescence , charge carrier , quantum well , thermionic emission , materials science , core (optical fiber) , rectangular potential barrier , molecular physics , quantum tunnelling , quantum dot , condensed matter physics , electron , chemical physics , optoelectronics , chemistry , physics , optics , laser , composite material , quantum mechanics
Herein, the charge carrier dynamics in GaAs/(In,Ga)As/(Al,Ga)As core–shell nanowires with different outer shell structures are studied. Localization of charge carriers in the minima of potential fluctuations is shown to govern the recombination processes at low temperatures. At higher temperatures, thermionic emission of carriers from the (In,Ga)As shell quantum well leads to a decrease of the luminescence efficiency for a sample with a GaAs outer shell. This effect can be reduced by introducing an AlAs barrier shell. However, the interfaces to this barrier act as an additional source for nonradiative recombination. These results will help in achieving high luminescence intensities at room temperature of light‐emitting devices based on nanowire shell quantum wells.