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Edge Effect on the Photodetection Ability of the Graphene Nanocrystallites Embedded Carbon Film Coated on p‐Silicon
Author(s) -
Zhang Xi,
Peng Da,
Lin Zezhou,
Chen Wencong,
Diao Dongfeng
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800511
Subject(s) - graphene , materials science , photodetection , responsivity , photocurrent , silicon , optoelectronics , enhanced data rates for gsm evolution , graphene nanoribbons , nanotechnology , photodetector , telecommunications , computer science
A sensitive photodetector of graphene nanocrystallites embedded carbon (GNEC) film coated on p‐silicon has been proposed. Different from the conventional growth mode of graphene, GNEC film contains a large amount of vertically grown graphene nanocrystallites (GNs). Edges of GNs act as electron trapping centers, increasing the ability to capture electrons. Different types of films are prepared under various deposition biases (20, 40, 60, and 80 V), which have different density of edges ( N edge ). Edge entrapment improves the photocurrent responsivity of 40 V film (high N edge ) to 0.401 A W −1 , compared with 0.126 A W −1 of 20 V film (amorphous, no N edge ) and 0.194 A W −1 of 80 V film (low N edge ). A high specific detectivity of 1.34 × 10 12 cm Hz 1/2 W −1 is exhibited at zero bias. GNs maintain a charge transport channel, which makes it have a fast response time τ rise = 260 ns.