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Improved Negative‐Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation Engineering
Author(s) -
Cheng ChunHu,
Fan ChiaChi,
Hsu HsiaoHsuan,
Wang ShihAn,
Chang ChunYen
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800493
Subject(s) - passivation , ferroelectricity , materials science , negative impedance converter , optoelectronics , transistor , capacitance , hysteresis , fluorine , field effect transistor , dielectric , electrical engineering , nanotechnology , voltage , electrode , condensed matter physics , chemistry , layer (electronics) , metallurgy , engineering , voltage source , physics
A ferroelectric negative‐capacitance (NC) transistor using aluminum‐doped hafnium oxide (HfAlO x ) with fluorine passivation is successfully demonstrated. The fluorine‐passivated device shows a nearly hysteresis‐free forward/reverse swing of sub‐30 mV dec −1 for symmetric switch, a wide sub‐60 mV (dec·swing) −1 range over 4 decades of drain current, an ultralow off‐leakage current of 4 fA μm −1 , and a high on/off current ratio of >10 8 . The fluorine defect passivation (FP) reduces oxygen vacancies of ferroelectric HfAlO x to mitigate interface depolarization field and thereby reinforce surface potential amplification effect during NC operation.