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Room‐Temperature InGaAs Nanowire Array Band‐Edge Lasers on Patterned Silicon‐on‐Insulator Platforms
Author(s) -
Kim Hyunseok,
Lee WookJae,
Chang TingYuan,
Huffaker Diana L.
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800489
Subject(s) - materials science , optoelectronics , nanowire , lasing threshold , silicon , laser , nanophotonics , photonic crystal , silicon on insulator , photonics , photonic integrated circuit , wafer , optics , wavelength , physics
Integration of ultracompact light sources on silicon platforms is regarded as a crucial requirement for various nanophotonic applications. In this work, InGaAs/InP core/shell nanowire array photonic crystal lasers are demonstrated on silicon‐on‐insulator substrates by selective‐area epitaxy. 9 × 9 square‐lattice nanowires forming photonic crystal cavities with a footprint of only 3.0 × 3.0 μm 2 , and a high Q factor of 23 000 are achieved by forming these nanowires on two‐dimensional silicon gratings. Room‐temperature lasing is observed from a fundamental band‐edge mode at 1290 nm, which is the O‐band of the telecommunication wavelength. Optimized growth templates and effective in‐situ passivation of InGaAs nanowires enable the nanowire array to lase at a low threshold of 200 μJ cm −2 , without any signature of heating or degradation above the threshold. These results represent a meaningful step toward ultracompact and monolithic III–V lasers on silicon photonic platforms.