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Tailoring of Optoelectronic Properties of ϵ‐Fe 2 O 3 Thin Films Through Insertion of Organic Interlayers
Author(s) -
Tanskanen Anne,
Karppinen Maarit
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800390
Subject(s) - superlattice , atomic layer deposition , materials science , thin film , layer (electronics) , benzene , band gap , optoelectronics , deposition (geology) , oxide , period (music) , nanotechnology , chemistry , organic chemistry , metallurgy , sediment , acoustics , biology , paleontology , physics
Combined atomic/molecular layer deposition (ALD/MLD) technique enables the engineering of inorganic–organic superlattices with atomic/molecular layer accuracy for the individual layer thicknesses. Here we demonstrate how the optical and electronic properties of ϵ‐Fe 2 O 3 thin films can be gradually tuned with an insertion of monomolecular organic layers. In our ϵ‐Fe 2 O 3 :benzene superlattice (SL) structures the thickness of individual iron oxide layers varies in the range of 1–17 nm. With decreasing ϵ‐Fe 2 O 3 layer thickness, that is, SL period, the films become more transparent. Moreover revealed from the UV–vis spectra is that the indirect optical bandgap increases from ≈2.0 eV for ϵ‐Fe 2 O 3 up to ≈2.3 eV for the SL films with the shortest SL period. We foresee that the ALD/MLD approach presented here for the ϵ‐Fe 2 O 3 –benzene thin films can be exploited in fabricating many other interesting hybrid material systems with controlled optoelectronic properties.