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Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet
Author(s) -
Nozaki Tomohiro,
AlMahdawi Muftah,
Shiokawa Yohei,
Pati Satya Prakash,
Ye Shujun,
Kotani Yoshinori,
Toyoki Kentaro,
Nakamura Tetsuya,
Suzuki Motohiro,
Yonemura Syougo,
Shibata Tatsuo,
Sahashi Masashi
Publication year - 2018
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800366
Subject(s) - magnetization , spintronics , condensed matter physics , antiferromagnetism , materials science , spin (aerodynamics) , magnetic field , physics , ferromagnetism , quantum mechanics , thermodynamics
Antiferromagnets and ferrimagnets with a low net magnetic moment are key components for future spintronic devices because they enable high‐integration and high‐speed (on the order of THz) operations. Cr 2 O 3 is one of the few antiferromagnets that can achieve 180° manipulation of its spin by electrical means. In this study, the authors developed a new functional material, Cr 2 O 3 , with tunable parasitic magnetization. The authors demonstrate both magnitude and direction tunability of parasitic magnetization in Cr 2 O 3 thin films by doping. A sublattice magnetization reduction and displacement‐induced nonequivalent Cr moments by site‐selective substitution of nonmagnetic elements are inferred to be the origin of the parasitic magnetization. By utilizing the tunable parasitic magnetization, the authors demonstrate the manipulation of antiferromagnetic single domain. In addition, the authors confirm the low‐electric‐field switching ability of the antiferromagnetic spin in a doped Cr 2 O 3 /Co exchange coupling system. Such tunable parasitic magnetization enables easy manipulation and detection of antiferromagnetic spin and provides a platform for further understanding of antiferromagnets and research opportunities in innovative spintronics device applications.