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Integrating Graphene/MoS 2 Heterostructure with SiN x Waveguide for Visible Light Detection at 532 nm Wavelength
Author(s) -
Wu Zeru,
Zhang Tianyou,
Chen Yujie,
Zhang Yanfeng,
Yu Siyuan
Publication year - 2019
Publication title -
physica status solidi (rrl) – rapid research letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.786
H-Index - 68
eISSN - 1862-6270
pISSN - 1862-6254
DOI - 10.1002/pssr.201800338
Subject(s) - heterojunction , graphene , optoelectronics , materials science , photodetector , monolayer , waveguide , silicon , nanotechnology
In this work, a silicon nitride waveguide‐integrated photodetector based on a transferred graphene/MoS 2 heterostructure has been reported, where photo‐generated electron–hole pairs are produced in the CVD‐grown MoS 2 monolayer and rapidly separated at the heterostructure interface, followed by electrons continuously transferring to the graphene layer induced by an effective built‐in electrical field. By tuning the back‐gate voltage to control the Fermi‐level in graphene layer, a competitive photoresponsivity of 440 mA W −1 at 532 nm is achieved. Furthermore, these exhibit a photoresponse rate with a rise time of 80 ms and a fall time of 30 ms. It is believed that the 2D heterostructure has potentials for future applications in integrated optoelectronic circuits.